发明名称 METHOD OF MANUFACTURING CHARGED PARTICLE BEAM TRANSFER MASK AND CHARGED PARTICLE BEAM TRANSFER MASK
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a charged particle beam transfer mask at a high productivity and a mask manufactured thereby; the mask having a stencil mask structure having a transferring pattern of holes formed in a conductive thin film layer. <P>SOLUTION: The method has a process of forming a conductive thin film layer on one main surface of a quartz glass substrate, a process of back facing the opposite side of the quartz glass substrate to the thin film layer to form a thin-walled portion of the substrate, processes f, g of etching the thin film layer to form through-holes through the thin film layer like a transferring pattern, a process h of forming a girder resist pattern on the thin-walled portion a step i of sand-blasting this walled portion to make further thin, a process of wet etching and removing the thinned thin-wall portion to form a girder of quartz glass, and a process j of forming windows for passing a charged particle beam through charged particle beam pass holes so as to contribute to the transfer. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005286276(A) 申请公布日期 2005.10.13
申请号 JP20040102289 申请日期 2004.03.31
申请人 DAINIPPON PRINTING CO LTD 发明人 TAKIGAWA TADAHIKO;KUROSAWA HIDE;SANO NAOTAKE;KONASE YOSHIAKI;FUJITA HIROSHI
分类号 G03F1/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/20
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