| 摘要 |
A semiconductor device of the present invention includes, as a peripheral MIS transistor 25 b, a gate insulating film 13 b and a gate electrode 14 b provided above an active region 10 b, first and second sidewalls 19 b and 23 b provided on side surfaces of the gate electrode 14 b, n-type source and drain regions 24 b provided away from each other in the active region, nitrogen diffusion layers 18 provided below the outer sides of the gate electrode 14 b, n-type extension regions 16 containing arsenic and provided in regions of the active region 10 b located below the outer sides of the gate electrode 14 b so that the n-type extension regions 16 cover the inner side surfaces and the bottom surfaces of the nitrogen diffusion layers 18, respectively, and n-type dopant regions 17 containing phosphorus and provided in regions of the active region 10 b located below the outer sides of the gate electrode 14 b and deeper than the n-type extension regions 16.
|
