发明名称 |
SUPER-RESOLUTION NEAR-FIELD STRUCTURE AND SUPER-RESOLUTION NEAR-FIELD EXPOSURE METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To perform reliable exposure of a photoresist layer with near-field light without thermally damaging the photoresist layer. <P>SOLUTION: A photoresist layer 22 and a photochromic layer 24 are sequentially formed on a prescribed substrate 21. The photochromic layer 24 is irradiated with a first laser beam 27, whereby the photochromic layer 24 is made partially transparent to form an opening 28. Near-field light 29 is then generated by irradiating the opening 28 of the photochromic layer 24 with a second laser beam 37 and the photoresist layer 22 is exposed with the near-field light 29. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2005283753(A) |
申请公布日期 |
2005.10.13 |
申请号 |
JP20040094812 |
申请日期 |
2004.03.29 |
申请人 |
WAKAYAMA UNIV |
发明人 |
ITO AKIFUMI;IRIE MASAHIRO |
分类号 |
G03F7/004;G03F7/20;G11B7/0045;H01L21/027 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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