| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory card and a test method therefor that can shorten the time for test of a nonvolatile memory after the assembly of the memory card. <P>SOLUTION: The nonvolatile memory card has a NAND type EEPROM 11 having a cell array of electrically rewritable nonvolatile memory cells arranged repeatedly in row and column directions, test information 18 stored in a predetermined address of the NAND type EEPROM 11, and a controller 12 for testing the NAND type EEPROM 11 according to the test information 18. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
