发明名称 |
Semiconductor memory device for sensing voltages of bit lines in high speed |
摘要 |
The present invention relates to a semiconductor memory device for sensing voltages of bit lines in high speed. The semiconductor memory device for sensing voltages of bit lines in high speed includes: a first bit line pair to a fourth bit line pair each coupled to a different unit cell array; a bit line sense amplifying means coupled to the first bit line pair to the fourth bit line pair for amplifying data transmitted through the first bit line pair to the fourth bit line pair; and a switching block for connecting one of the first bit line pair to the fourth bit line pair with the bit line sense amplifying means in response to a control signal.
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申请公布号 |
US2005226025(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20040017641 |
申请日期 |
2004.12.22 |
申请人 |
KANG KHIL-OHK |
发明人 |
KANG KHIL-OHK |
分类号 |
G11C5/06;G11C7/06;G11C7/18;G11C11/4091;G11C11/4097;(IPC1-7):G11C5/06 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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