| 摘要 |
<P>PROBLEM TO BE SOLVED: To overcome instability of electrostatic breakdown voltage in a gallium nitride semiconductor element, while suppressing the rise in resistance, as much as possible. <P>SOLUTION: The gallium nitride semiconductor element is provided with a nitride gallium semiconductor layer (p-type layer) having p-type impurity and showing p-type conductivity. The p-type layer consists of a surface layer and a bottom part farther inside than the part. The profundal part becomes a region, where hydrogen coexists in a range where conductivity with p-type impurity is not lost. The ratio of atom concentration of hydrogen to p-type impurity in the profundal part is desirably be 1:1. The thickness of the profundal part is desirable to be 40 to 99.9% of thickness of the p-type layer. The hydrogen content in the surface layer of the p-type layer is set to be under content of the profundal part, to be 2/3 or smaller desirably. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
