| 摘要 |
<p>PURPOSE: To produce a thin compound oxide film of large area by disposing plural sputtering cathodes in the same film formation chamber, supplying independent electric power to respective cathodes, and performing simultaneous sputtering. CONSTITUTION: Plural sputtering cathodes 7, 8, 9 are disposed on the same circumference in a sputtering chamber 16. Independent high frequency electric power sources 13, 14, 15 are connected to the cathodes 7, 8, 9, respectively. Targets 10, 11, 12, each containing a metallic element which is a part of a compound oxide, are fitted to the cathodes 7, 8, 9, respectively. A substrate 18 is fitted to a substrate holder 17 passing over the cathodes 7, 8, 9 while rotating, and sputtering is performed compensators 19 are provided on the targets 10, 11, 12, respectively, to correct a film composition so that the atomic substances emitted from the targets 10, 11, 12 can be made incident upon the substrate 18 uniformly. By this method, the thin film, having uniform composition, uniform film thickness, and large area, can be produced.</p> |
