| 摘要 |
The arrangement has a control region (2), to control a flow of current through the arrangement, and uses a voltage receiving region (3,) for receiving a voltage in the blocking condition of the semiconductor arrangement, which is monolithically integrated into a semiconductor substrate with a main surface. The control region is structurally separated from the voltage receiving region in the substrate. The control region is joined by conductor paths (4) to the voltage receiving zone. |
