发明名称 |
Semiconductor device and method for manufacturing same |
摘要 |
A semiconductor device is provided having a high performance resistance element. In an N-type well isolated by an insulating film, two higher concentration N-type regions are formed. An interlayer insulating film is also formed. In a plurality of openings in the interlayer insulating film, one electrode group having a plurality of electrodes is formed on one N-type region, while a second electrode group having a plurality of electrodes is formed on the other N-type region. The relationship between the two N-type regions is between an island region and an annular region surrounding the island. The annular region of the N-type well between the island region and the annular region serves as a resistor R. Thus, discharge channels for charges applied excessively because of ESD or the like evenly exist in the periphery (four regions) of the one N-type region.
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申请公布号 |
US2005218454(A1) |
申请公布日期 |
2005.10.06 |
申请号 |
US20050095709 |
申请日期 |
2005.03.31 |
申请人 |
SAIKI TAKAYUKI;OKAWA KAZUHIKO |
发明人 |
SAIKI TAKAYUKI;OKAWA KAZUHIKO |
分类号 |
H01L21/28;H01L21/822;H01L23/62;H01L27/04;(IPC1-7):H01L23/62 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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