| 摘要 |
PROBLEM TO BE SOLVED: To provide a hydrogen treatment apparatus which uses activated hydrogen generated by heat catalytic action of a gas containing hydrogen on the surface of a heat catalyst heated to a high temperature for a semiconductor device having a metal-insulation film, or oxide film-semiconductor structure, formed on a semiconductor substrate to terminate hydrogen of a dangling bond, existing near an interface between a gate insulation film and a semiconductor, and hence, to reduce the defect density on the interface, and to provide a method of manufacturing the semiconductor device. SOLUTION: The heat catalyst is located near the semiconductor substrate, and a hydrogen gas or a gas containing hydrogen is passed near the heat catalyst to generate the activated hydrogen by heat catalytic action on the heated surface of the heat catalyst. By supplying the activated hydrogen to the semiconductor substrate, the density of defects on the interface between the gate insulation film and the semiconductor can be reduced at a low temperature, to form a proper gate insulation film/semiconductor interface sufficiently durable in practical use. COPYRIGHT: (C)2006,JPO&NCIPI
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