| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an ohmic electrode structure which is advantageous to microfabrication and can prevent resist contamination, an ohmic electrode structure, a semiconductor manufacturing device, and a semiconductor device. SOLUTION: The ohmic electrode structure is provided with a high concentration impurity region 2 selectively formed on the surface of a SiC substrate 1, a thick insulating layer 3 laid on the SiC substrate 1, a contact window 4 by which an opening is formed so that the surface of the high concentration impurity region 2 is exposed into the thick insulating layer 3, a heating reaction layer 5 formed in the contact window 4 at the inner bottom in self alignment, and a wiring conductor 6 contacted with the surface of the heating reaction layer 5 in the contact window 4 and extended to the upper part of the thick insulating layer 3. COPYRIGHT: (C)2006,JPO&NCIPI
|
