发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A method of manufacturing semiconductor device comprising forms a first impurity diffusion region as a lower electrode of a capacitor in a first area of a semiconductor substrate by implanting impurities at a first dose; forms a second impurity diffusion region in a second area, at the end part of the semiconductor substrate, by implanting impurities at a second dose; and forms, by a thermal oxidation method, a capacitor insulation film having a first thickness on the first impurity diffusion region and forms an oxide film having a second thickness which is thicker than the first thickness on the second area.
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申请公布号 |
US2005221556(A1) |
申请公布日期 |
2005.10.06 |
申请号 |
US20050099699 |
申请日期 |
2005.04.06 |
申请人 |
FUTATSUGI TOSHIRO;HORIGUCHI NAOTO;OKABE KEN-ICHI;HIKAZUTANI KENICHI |
发明人 |
FUTATSUGI TOSHIRO;HORIGUCHI NAOTO;OKABE KEN-ICHI;HIKAZUTANI KENICHI |
分类号 |
H01L27/04;H01L21/02;H01L21/316;H01L21/822;H01L21/8234;H01L21/8242;H01L27/06;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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