发明名称 |
Positive resist composition for use with electron beam, EUV light or X ray, and pattern formation method using the same |
摘要 |
A positive resist composition for use with an electron beam, an EUV light or an X ray, the positive resist composition comprising: (A) at least one compound that generates an acid upon treatment with one of an actinic ray and radiation; and (B) a resin that increases a solubility of the resin (B) in an alkaline developer by an action of an acid, wherein the resin (B) comprises a repeating unit having an alicyclic group connected with a fluorine-substituted alcohol residue; and a pattern formation method using the composition.
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申请公布号 |
US2005221224(A1) |
申请公布日期 |
2005.10.06 |
申请号 |
US20050090864 |
申请日期 |
2005.03.28 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
MIZUTANI KAZUYOSHI |
分类号 |
G03F7/004;G03F7/033;G03F7/039;H01L21/027;(IPC1-7):G03C1/492 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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