| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that has an electrostatic protection circuit for reducing the leakage current during normal operation. <P>SOLUTION: This semiconductor device contains a thyristor 21, a trigger circuit 22 and a surge detection/leakage reduction circuit 23. In the above thyristor, an anode is connected to the first terminal 24 and a cathode is connected to the second terminal 25. The above trigger circuit is configured in a way that it gates the above thyristor when a surge is applied to the first terminal. The above surge detection/leakage reduction circuit is provided between the gate of the thyristor and the second terminal and is configured in a way that it cuts off the current flowing from the above trigger circuit to the above second terminal during normal operation and sets the trigger voltage to gate the above thyristor together with the above trigger circuit when the surge is applied. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
