发明名称 METHOD OF MANUFACTURING GALLIUM NITRIDE NANOWIRE COATED WITH GALLIUM OXIDE LAYER
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a gallium nitride nanowire coated with a gallium oxide layer. SOLUTION: The gallium nitride nanowire coated with the gallium oxide layer is manufactured by heating gallium nitride nanowire having 40-50 nanometer diameter at 700-1,200°C for 12-24 hr in dry air. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005272207(A) 申请公布日期 2005.10.06
申请号 JP20040088041 申请日期 2004.03.24
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 BANDO YOSHIO;CHENGCHUN TANG
分类号 C04B41/87;(IPC1-7):C04B41/87 主分类号 C04B41/87
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