| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method in which a process efficiency is not degraded and other integrated circuit elements produced so far are not affected, and which has a resistor device which can easily be incorporated in an existing process. SOLUTION: A region where an As ion implantation region 13 and a P ion implantation region 14 mixedly exist becomes an effective region of the resistor device, and contact regions 151, 152 are formed only in the portion of the As ion implantation region 13. The As ion implantation region 13 and the P ion implantation region 14 are constituted such that each dopant of As and P can obtain at least given temperature characteristics at a given ratio and by ion implantation with a dose quantity adjusted. The ion implantation at a high acceleration and a high dose may not be done, and if under conditions that two kinds or more of dopants are subjected to the ion implantation at an equal ratio and with the dose quantity adjusted, the given temperature characteristics can be obtained. COPYRIGHT: (C)2005,JPO&NCIPI
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