发明名称 CORRECTING METHOD OF LITHOGRAPHIC PROCESSING AND FORMING METHOD OF OVERLAPPING MARK
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of correcting lithographic processing when forming an overlapping mark. <P>SOLUTION: Physical vapor depositing (PVD) is performed as if film were laminated on a wafer. Unsymmetrical deposition of the film on a side wall of opening portion relates to a variation of consumption of a target in the PVD treatment. Therefore, a location shift in the overlapping mark varies in each time duration. A formula relating to the consumption of the target and the location shift is extracted, and the formula is recorded on a controller system. A compensation value is obtained from the controller system, and it feeds back to next lithographic processing. Namely, error in a measurement of the overlapping mark can be reduced because the compensation value is fed back through the controller system so that the location shift in the overlapping mark brought from the consumption of the target in the PVD treatment may be corrected. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005268745(A) 申请公布日期 2005.09.29
申请号 JP20040286935 申请日期 2004.09.30
申请人 PROMOS TECHNOLOGIES INC 发明人 CHEN TAI-YUAN
分类号 H01L21/027;G03F7/00;G03F7/20;H01L21/203;H01L21/44;H01L21/66;H01L23/544 主分类号 H01L21/027
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