| 发明名称 |
Strained silicon with reduced roughness |
| 摘要 |
The invention provides a strained silicon layer with a reduced roughness. Reduced cross-hatching in the strained silicon layer may allow the reduced roughness.
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| 申请公布号 |
US2005211982(A1) |
申请公布日期 |
2005.09.29 |
| 申请号 |
US20040808021 |
申请日期 |
2004.03.23 |
| 申请人 |
LEI RYAN;SHAHEEN MOHAMAD;BARNS CHRIS;JIN BEEN-YIH;BRASK JUSTIN |
发明人 |
LEI RYAN;SHAHEEN MOHAMAD;BARNS CHRIS;JIN BEEN-YIH;BRASK JUSTIN |
| 分类号 |
H01L21/20;H01L21/205;H01L21/336;H01L29/04;H01L29/10;H01L29/12;H01L29/78;H01L31/036;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/20 |
| 代理机构 |
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