SEMICONDUCTOR DEVICE HAVING DAMASCENE STRUCTURE PROVIDED WITH AIR-GAP AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a low-cost manufacturing method for a semiconductor device having Damascene structure provided with an air-gap. SOLUTION: The manufacturing method comprises steps of: providing a flat layer M1 including a first metal layer, adhering a route level dielectric material layer VL; processing a pattern of the route level dielectric material layer VL; partially etching the route level dielectric material layer VL; adhering a disposable layer PR on the partially etched route level dielectric material layer VL; processing a pattern of the disposable layer PR; adhering a second metal layer M2, flattening the second metal layer M2; adhering a permeable dielectric material layer PDL after flattening the second metal layer M2; and removing the disposable layer PR through the permeable dielectric material layer PDL in order to form an air gap AG. COPYRIGHT: (C)2005,JPO&NCIPI