| 摘要 |
PROBLEM TO BE SOLVED: To more easily form a fine metal pattern than in a conventional art. SOLUTION: If a silicon substrate 101 is heated at hundred and several tens°C, and a voltage is applied between the silicon substrate 101 and a mold 104, an electric field distributed corresponding to the formed portion of the pattern 141 acts on a resin film 102, the resin film 102 is moved to an area on which the electric field more strongly acts by the self-organizing capability of a high molecule, thereby enabling the generation of a condition that the resin pattern 105 is formed on the silicon substrate 101. In the resin film 102, the resin is coagulated on a portion on which the electric field acts to form a pattern that is grown in a direction of the mold 104 into the resin pattern 105. COPYRIGHT: (C)2005,JPO&NCIPI
|
