发明名称 FIELD EFFECT TRANSISTOR AND DISPLAY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a field effect transistor that employs low operating voltage and suppresses leakage current and a display device using the same. SOLUTION: This display device comprises multiple pixel electrodes and control elements provided for each group of multiple pixel electrodes. The control elements comprise gate electrodes formed on a substrate, gate insulators on the gate electrodes, organic semiconductor films on the gate insulators, and first and second electrodes formed on the organic semiconductor films. In addition, the gate insulators comprise the first and second gate insulators, the first gate insulator is higher dielectric than that of the second gate insulator, and the second gate insulator is higher inslulative than that of the first gate insulator. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005268615(A) 申请公布日期 2005.09.29
申请号 JP20040080722 申请日期 2004.03.19
申请人 NIPPON HOSO KYOKAI <NHK> 发明人 FUJISAKI YOSHIHIDE;KURITA YASUICHIRO;TOKITO SHIZUO;FUJIKAKE HIDEO
分类号 H01L51/05;H01L29/786;H01L51/00;(IPC1-7):H01L29/786 主分类号 H01L51/05
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