发明名称 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILMS, PROCESS FOR PRODUCTION OF THE FILMS, INTERLAYER DIELECTRICS, AND SEMICONDUCTOR DEVICES
摘要 <p>A composition capable of forming porous films which are excellent in dielectric characteristics, close adhesion, uniformity of application, and mechanical strengths and are reduced in moisture absorption; porous films; a process for the production of the films; and semiconductor devices which have the films built-in and exhibit high performance and high reliability. The composition comprises a surfactant and a solution containing a polymer obtained by condensation of at least one alkoxysilane represented by the general formula (1) with at least one alkoxysilane represented by the general formula (2) through hydrolysis in the presence of a surfactant: (R&lt;1&gt;)mSi(OR&lt;2&gt;)4-m (1) R&lt;3&gt;Si(R&lt;4&gt;)n(OR&lt;5&gt;)3-n (2) (wherein R&lt;1&gt; is substituted or unsubstituted hydrocarbyl; R&lt;2&gt; is alkyl having 1 to 4 carbon atoms; R&lt;3&gt; is linear or branched alkyl having 8 to 30 carbon atoms; R&lt;4&gt; is substituted or unsubstituted hydrocarbyl; R&lt;5&gt; is alkyl having 1 to 4 carbon atoms; m is an integer of 0 to 3; and n is an integer of 0 to 2). The process comprises the step of applying the composition and the step of converting the obtained coating film into a porous film.</p>
申请公布号 EP1580804(A1) 申请公布日期 2005.09.28
申请号 EP20030811129 申请日期 2003.11.13
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HAMADA, YOSHITAKA;YAGIHASHI, FUJIO;NAKAGAWA, HIDEO;SASAGO, MASARU
分类号 C01B33/12;C01B37/02;C08K5/19;C09D5/25;C09D183/02;C09D183/04;H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/312;C08G77/18 主分类号 C01B33/12
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