| 摘要 |
A clad plate for forming an interposer for a semiconductor device which can be manufactured at low cost and has good characteristics, an interposer for a semiconductor device, and a method of manufacturing them. Copper foil materials ( 19, 24, 33 ) forming conductive layers ( 10, 17, 18 ) and nickel plating ( 20, 21 ) forming etching stopper layers ( 11, 12 ) are formed and pressed to form a clad plate ( 34 ) for forming an interposer for a semiconductor device. Thus, a clad plate ( 34 ) for forming an interposer for a semiconductor device is manufactured. The clad plate ( 34 ) is selectively etched to form a columnar conductor ( 17 ), and an insulating layer ( 13 ) is formed on the copper foil material forming a wiring layer ( 10 ). A bump ( 18 ) for connection of a semiconductor chip and the wiring layer ( 10 ) are formed on the opposite side to the side on which the columnar conductor ( 17 ) is formed. Thus, an interposer for a semiconductor device is manufactured. |
