| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit having an open drain which does not permit rise of well potential up to the operating point of a parasitic bipolar transistor even if a heavy current is caused to flow through application of a higher voltage to the drain. SOLUTION: The semiconductor integrated circuit has a transistor of the structure comprising a plurality of source columns and drain columns which are interdigitally constituted like combs and LDDs surrounding respectively a plurality of source columns and drain columns. In this semiconductor integrated circuit, a part of a plurality of source columns is replaced with well contacts which are respectively arranged in the equal interval. When the interval of the source columns is wide, a part of a plurality of source columns is replaced in the equal interval by shifting the arrangement interval as much as 1/2 from the adjacent source columns. COPYRIGHT: (C)2005,JPO&NCIPI
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