| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting device which improves light extraction efficiency. <P>SOLUTION: The nitride semiconductor light emitting device comprises p-type nitride semiconductor layers (p-type contact layer 3, p-type clad layer 4 and cap layer 5) formed on a conductive board 1, an active layer 6 formed on the cap layer 5, n-type nitride semiconductor layers (n-type clad layer 7 and n-type contact layer 8) formed on the active layer 6, and a light transmissive layer 9 formed on the n-type contact layer 8 which has a lower carrier concentration than carrier concentrations (about 5×10<SP>18</SP>cm<SP>-3</SP>) of the n-type clad layer 7 and the n-type contact layer 8. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
