发明名称 X-ray exposure apparatus and method, semiconductor manufacturing apparatus, and microstructure
摘要 An X-ray exposure apparatus extracts exposure X-rays from light called synchrotron radiation from a synchrotron radiation source by an optical path including an X-ray mirror and performs exposure using the extracted X-rays. The X-ray mirror contains a material having an absorption edge in at least one of a wavelength range of less than 0.45 nm and a wavelength range exceeding 0.7 nm, thereby implementing exposure using the X-ray in the range of 0.45 nm to 0.7 nm. The X-ray mirror contains at least one material selected from the group consisting of iron, cobalt, nickel, copper, manganese, chromium, and their alloys, nitrides, carbides, and borides.
申请公布号 US6947519(B2) 申请公布日期 2005.09.20
申请号 US20010951456 申请日期 2001.09.14
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 ITOGA KENJI;UZAWA SHUNICHI;WATANABE YUTAKA;KITAYAMA TOYOKI
分类号 G03F1/16;G03F1/22;G03F7/20;G21K1/06;G21K1/10;G21K5/02;G21K5/04;H01L21/027;H05H13/04;(IPC1-7):G21K5/00 主分类号 G03F1/16
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