| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem that since coupling between wiring and a substrate is weak, when a semiconductor device is formed on an insulating substrate, a coupling capacity between the wirings is large, so that noise generated from clock signal wiring is mixed into the other wiring. <P>SOLUTION: A shielding layer 180 and a shielding layer 221 are formed at a lower section and at an upper section in a digital circuit area, respectively. This allows a fluctuation of a surrounding electric field due to a clock etc. to be deterred, and noises mixed into an output line to be prevented. Since the increase of the capacity of the output line directly results in performance deterioration in the case of an image sensor, the shielding layer is not formed near upper and lower sides of the output lines 142, 200. For outside noise mixed into the output line from an area except the digital circuit area, the shielding layer 135 is formed at a place sufficiently distant from the output line such a sensor module housing or the copy facing surface of an optical component. By forming the shielding layer 180 at a lower section of a transistor, an optical leak preventing measure and threshold voltage control, etc. can be performed. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
