| 摘要 |
A SiGe thin layer semiconductor structure containing a substrate having a dielectric layer, a variable composition Si<SUB>x</SUB>Ge<SUB>1-x </SUB>layer on dielectric layer, and a Si cap layer on the variable composition Si<SUB>x</SUB>Ge<SUB>1-x </SUB>layer. The variable composition Si<SUB>x</SUB>Ge<SUB>1-x </SUB>layer can contain a Si<SUB>x</SUB>Ge<SUB>1-x </SUB>layer with a graded Ge content or a plurality of Si<SUB>x</SUB>Ge<SUB>1-x </SUB>sub-layers each with different Ge content. In one embodiment of the invention, the SiGe thin layer semiconductor structure contains a semiconductor substrate having a dielectric layer, a Si-containing seed layer on the dielectric layer, a variable composition Si<SUB>x</SUB>Ge<SUB>1-x </SUB>layer on the seed layer, and a Si cap layer on the variable composition Si<SUB>x</SUB>Ge<SUB>1-x </SUB>layer. A method and processing tool for fabricating the SiGe thin layer semiconductor structure are also provided.
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