发明名称 MONOLITHIC LOW-NOISE AMPLIFIER
摘要 PROBLEM TO BE SOLVED: To suppress the radiation and conduction of unneeded waves at this band to the outside of the chip, by reducing a high-frequency gain outside the band causing unnecessary oscillation, when using the chip of a monolithic low-noise amplifier by mounting to an airtight package. SOLUTION: The monolithic low-noise amplifier comprises am amplifying element 1; an input matching circuit 3 whose one end is connected to the input end of the amplifier; an output matching circuit 6 whose one end is connected to the output end of the amplifier; an input bias circuit 4 connected to the other end of the input matching circuit; an output bias circuit 7 connected to the other end of the output matching circuit; and a high-frequency attenuation circuit 38 outside the band that is connected to the other end of the output bias circuit, and has a signal attenuation action a frequency band that is higher than a required band in a desired band. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005244539(A) 申请公布日期 2005.09.08
申请号 JP20040050832 申请日期 2004.02.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 IYAMA YOSHITADA;SHIGEMATSU TOMONORI;TOMIYAMA KENICHI
分类号 H01L23/12;H03F1/26;H03F3/60;(IPC1-7):H03F3/60 主分类号 H01L23/12
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