| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor capable of manufacturing a thin film transistor with good characteristics, the thin film transistor to be manufactured by the method for manufacturing the thin film transistor, a thin film transistor circuit provided with the thin film transistor, an electronic device and an electronic apparatus. SOLUTION: The method for manufacturing the thin film transistor comprises the steps of feeding, onto a substrate formed with a source electrode and a drain electrode, a liquefied material containing an organic semiconductor layer forming material and a first gate insulating layer forming material which are insoluble to each other, and a solvent which can dissolve both the materials to form a liquefied layer 9; and of removing the solvent from in the liquefied layer 9, with the result that a first domain 91' mainly containing the organic semiconductor layer forming material and a second domain 92' mainly containing the first gate insulating layer forming material are isolated from each other in a thickness direction of the liquefied layer 9 to be also solidified, to obtain an organic semiconductor layer and a first gate insulating layer. COPYRIGHT: (C)2005,JPO&NCIPI
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