发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, CIRCUIT BOARD AND ELECTRONIC APPARATUS |
摘要 |
A depression 22 is formed from a first surface 20 of a semiconductor substrate 10 on which is formed an integrated circuit 12. An insulating layer 28 is provided on the inner surface of the depression 22. A first conductive portion 30 is provided on the inside of the insulating layer 28. A second conductive portion 32 is formed on the inside of the insulating layer 28 and over the first conductive portion 30, of a different material from the first conductive portion 30. The first conductive portion 30 is exposed from a second surface 38 of the semiconductor substrate 10 opposite to the first surface 20. <IMAGE> |
申请公布号 |
KR100512817(B1) |
申请公布日期 |
2005.09.06 |
申请号 |
KR20037015901 |
申请日期 |
2003.12.04 |
申请人 |
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发明人 |
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分类号 |
H01L21/768;H01L21/78;H01L23/31;H01L23/48;H01L23/485;H01L25/065 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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