发明名称 FORMATION OF PHOTOCONDUCTIVE AND PHOTOVOLTAIC FILMS
摘要 <p>A deposition system (10) includes a vacuum reaction chamber (11) with a substrate holder (23) positioned in it. The substrate holder (23) is for carrying a substrate (24) therein. A sputtering apparatus (21) is also positioned in the vacuum reaction chamber. The sputtering apparatus (21) is configured to direct sputtered material towards the substrate (24) to form a sputtered material region thereon. A plasma enhanced chemical vapor deposition (PECVD) apparatus is positioned in the vacuum reaction chamber (11). The PECVD apparatus is configured to deposit a PECVD material region thereon the substrate (24). The first PECVD apparatus includes a first PECVD electrode (27) movable from a first position towards the substrate (24) and a second position away (103) from the substrate.</p>
申请公布号 WO2005080627(A1) 申请公布日期 2005.09.01
申请号 WO2005US05063 申请日期 2005.02.17
申请人 ENGLE, GEORGE, M. 发明人 ENGLE, GEORGE, M.
分类号 C23C14/00;C23C14/06;C23C14/32;C23C14/34;C23C16/00;C23C16/448;C23C16/50;C25B11/00;H01J37/32;H01J37/34;(IPC1-7):C23C14/34 主分类号 C23C14/00
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