发明名称 |
Strained-silicon devices with different silicon thicknesses |
摘要 |
A method of manufacturing a semiconductor device includes providing a strained-silicon semiconductor layer over a silicon germanium layer, and partially removing a first portion of the strained-silicon layer. The strained-silicon layer includes the first portion and a second portion, and a thickness of the second portion is greater than a thickness of the first portion. Initially, the first and second portions of the strained-silicon layer initially can have the same thickness. A p-channel transistor is formed over the first portion, and a n-channel transistor is formed over the second portion. A semiconductor device is also disclosed.
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申请公布号 |
US6936506(B1) |
申请公布日期 |
2005.08.30 |
申请号 |
US20030442975 |
申请日期 |
2003.05.22 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BULLER JAMES F.;WRISTERS DERICK J.;XIANG QI;YU BIN |
分类号 |
H01L21/336;H01L21/8234;H01L29/10;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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