| 发明名称 |
Amplified photoconductive gate |
| 摘要 |
The present invention includes a semiconductor epitaxial structure optimized for photoconductive free space terahertz generation and detection; and amplifier circuits for photoconductively sampled terahertz detection which may employ the optimized epitaxial structures.
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| 申请公布号 |
US6936821(B2) |
申请公布日期 |
2005.08.30 |
| 申请号 |
US20020307085 |
申请日期 |
2002.11.29 |
| 申请人 |
PICOMETRIX, INC. |
发明人 |
WILLIAMSON STEVEN L.;RUDD JAMES V.;ZIMDARS DAVID;WARMUTH MATTHEW;CHERNOVSKY ARTUR |
| 分类号 |
G01J5/20;H01L31/062;H01L31/112;H01L31/113;H01Q23/00;(IPC1-7):G01J5/20 |
主分类号 |
G01J5/20 |
| 代理机构 |
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