| 摘要 |
<p>An ion implantation method and an ion implantation apparatus which can uniformly implant ions into a thick region of a sample are provided. The ions to be implanted into the sample are once accelerated so as to have substantially equal velocities, decelerated by being allowed to pass through a vibrating thin plate having an uneven thickness so as to be decelerated in accordance with the thicknesses of the portions of the thin plate which the ions pass through, and then implanted into the sample. Accordingly, into targeted portions of the sample where the ions are to be implanted, the ions having unequal velocities are implanted. The implantation depths of the ions vary depending on the velocities of the ions, whereby a thick implantation region can be obtained.</p> |
