| 摘要 |
<P>PROBLEM TO BE SOLVED: To correct a mask pattern by an OPC (optical proximity effect correction) process highly precisely and to suppress a undesired data process time and a data amount from increasing. <P>SOLUTION: The mask data correction method is carried out by subjecting a pattern figure of a photomask to a proximity effect correction process so as to obtain a desired figure and dimension as a pattern in a photosensitive material film on a substrate to be processed or in an objective film to be processed by using the photosensitive film. After the pattern figure of the photomask is subjected to model-based proximity effect correction, the predictive figure of the pattern in the photosensitive material film or the pattern in the objective film to be processed by using the photosensitive film is calculated from the pattern figure of the photomask, and the error between the calculated predictive figure and the desired figure is calculated. Then the pattern figure of the photomask is further corrected by rule-based proximity correction based on the error calculated in a preset attentional portion. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
