| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce the coupling ratio among floating gates, and to prevent crosstalks between adjacent transistors. <P>SOLUTION: A cell transistor 11 comprises floating gates FG1, FG2 that face each side 13a, 13b of a projection section 13 and diffusion regions 14a, 14b across tunnel dielectrics 16a, 16b, and also face a control gate CG across top dielectrics 17a, 17b and FC-to-FC side dielectrics 18a, 18b. A conductor 20 is provided, that is disposed between the floating gates FG1, FG2 of the cell transistor 11 and other floating gates FG1, FG2 and is connected to the diffusion regions 14a, 14b. FE-to-FE dielectrics 21a, 21b are formed between the conductor 20 and the floating gates FG1, FG2, to form a CE-to-CE dielectric 22 between the conductor 20 and the control gate CG. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
