发明名称 Fine particle film forming apparatus and method and semiconductor device and manufacturing method for the same
摘要 After a barrier film is formed on a pad electrode, Ni particles having a diameter of 2 mum or less are selectively deposited on the barrier film, thereby forming a Ni fine particle film. Then, a bump electrode made of a solder ball is provided on the pad electrode through the Ni fine particle film. Thereafter, the bump electrode is melted by a heat treatment to join the Ni fine particle film to the bump electrode. Thus, a bump electrode structure is finished.
申请公布号 US6933216(B2) 申请公布日期 2005.08.23
申请号 US20020314364 申请日期 2002.12.09
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SAKATA ATSUKO;SASAKI KEIICHI;HAYASAKA NOBUO;OKUMURA KATSUYA;NISHINO HIROTAKA
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L23/485;(IPC1-7):H01L21/20 主分类号 H01L23/52
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