| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device suppressing OB step. SOLUTION: The solid state imaging device comprises a photoelectric conversion element equipped with a pn junction region 20 in an image formation region pixel 14 and an optical black region pixel 13, respectively. The ratio between the size of pn junction region of the photoelectric conversion element formed in the image formation region pixel and the size of semiconductor junction region of the photoelectric conversion element formed in the optical black region pixel is set so that the dark current value of the photoelectric conversion element formed in the image formation region pixel 14 is identical with that of the photoelectric conversion element formed in the optical black region pixel 13, or that the difference between them is small. COPYRIGHT: (C)2005,JPO&NCIPI
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