| 摘要 |
A memory cell is disclosed. The memory cell includes an N-well, three P-type doped regions formed on the N-type well, a first stacked dielectric layer formed on the N-type well and between a first doped region and a second doped region from among the three P-type doped regions, a first gate formed on the first stacked dielectric layer, a second stacked dielectric layer formed on the N-type well and between the second doped region and a third doped region from among the three P-type doped regions, and a second gate formed on the second stacked dielectric layer.
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