| 摘要 |
A semiconductor storage device has a memory cell ( 501, 502 ) storing data; bit lines (BL 1 , BL 2 ) connected to the memory cell, allowing therethrough data input or output to or from the memory cell; a sense amplifier ( 506 a) connected to said bit lines, amplifying data on the bit lines; and a switching transistor ( 505 a) connecting or disconnecting the bit line connected to the memory cell to or from the bit line connected to the sense amplifier. The switching transistor operates differently in a first memory cell access operation and in a second memory cell access operation.
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