发明名称 |
Nonvolatile semiconductor memory and manufacturing method thereof |
摘要 |
A nonvolatile semiconductor memory includes a trench isolation provided in a semiconductor substrate and an interlayer insulator provided on the semiconductor substrate. The trench isolation defines an active area extending in a first direction at the semiconductor substrate. The interlayer insulator has a wiring trench extending in a second direction intersecting the first direction. A first conductive material layer is provided at the cross-point of the active area and the wiring trench so that it is insulated from the active area. A second conductive material layer is provided in the wiring trench so that it is insulated from the first conductive material layer. A metal layer is provided in the wiring trench so that it is electrically in contact the second conductive material layer.
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申请公布号 |
US2005181561(A1) |
申请公布日期 |
2005.08.18 |
申请号 |
US20050100492 |
申请日期 |
2005.04.07 |
申请人 |
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发明人 |
ARITOME SEIICHI |
分类号 |
H01L21/3205;H01L21/76;H01L21/762;H01L21/8247;H01L23/52;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824;H01L21/20 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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