| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-fluorine based residue cleaning agent for copper wiring capable of removing residue after etching or ashing in the production process of a copper wiring semiconductor substrate or a semiconductor element effectively without causing any damage on the copper wiring or an insulating film, e.g. a low-k film, and to provide a cleaning method of a semiconductor substrate or a semiconductor element employing the cleaning agent, and a production process of a semiconductor substrate or a semiconductor element employing that cleaning method. SOLUTION: The non-fluorine based residue cleaning agent for copper wiring contains phosphorous acid and/or organic phosphoric acid and water. The cleaning method of a semiconductor substrate or a semiconductor element comprises a step for cleaning the semiconductor substrate or the semiconductor element using the non-fluorine based cleaning agent for copper wiring. The production process of a semiconductor substrate or a semiconductor element comprises a cleaning step employing the cleaning method. COPYRIGHT: (C)2005,JPO&NCIPI |
