P-TYPE ZnO SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a p-type ZnO semiconductor film high in reproducibility, and a method for manufacturing the same. SOLUTION: The p-type ZnO semiconductor film is mainly constituted of Zn and O, and contains an alkali metal and nitrogen with the alkali metal distributed preferably to be higher in concentration toward the both ends of the direction of film thickness. In the film, still preferably, the alkali metal content falls in the concentration range of 1×1018to 5×1021cm-3, and the nitrogen content falls in the concentration range of 2×1017to 5×1020cm-3. COPYRIGHT: (C)2005,JPO&NCIPI