| 摘要 |
An inertial sensor includes a mesoscaled disc resonator comprised of micro-machined substantially thermally non-conductive wafer with low coefficient of thermal expansion for sensing substantially in-plane vibration, a rigid support coupled to the resonator at a central mounting point of the resonator, at least one excitation electrode within an interior of the resonator to excite internal in-plane vibration of the resonator, and at least one sensing electrode within the interior of the resonator for sensing the internal in-plane vibration of the resonator. The inertial sensor is fabricated by etching a baseplate, bonding the substantially thermally non-conductive wafer to the etched baseplate, through-etching the wafer using deep reactive ion etching to form the resonator, depositing a thin conductive film on the through-etched wafer. The substantially thermally non-conductive wafer may comprise a silicon dioxide glass wafer, which is a silica glass wafer or a borosilicate glass wafer, or a silicon-germanium wafer.
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