| 摘要 |
<p>A method for reading non-volatile memory arranged in columns and rows which reduces adjacent cell coupling, sometimes referred to as the Yupin effect. The method includes the steps of : selecting a bit to be read in a word-line WLn ; reading an adjacent word line WLn+1 written after word line WLn ; and reading the selected bit in word line WLn by selectively adjusting at least one read parameter. In one embodiment, the read parameter is the sense voltage. In another embodiment, the read parameter is the pre-charge voltage. In yet another embodiment, both the sense and the pre-charge voltage are adjusted.</p> |
