| 摘要 |
PROBLEM TO BE SOLVED: To provide a polycrystalline metal oxide thin film of a uniform film thickness having a desired film thickness to be used for electronic devices or the like and its manufacturing method, and a non-volatile memory which uses the polycrystalline metal oxide thin film. SOLUTION: The polycrystalline metal oxide thin film, of which the surface is flat and the film thickness is uniform, is obtained by forming the coating film of a dispersion liquid in which the very fine perticles of a metal oxide are dispersed in a sol-gel liquid of a mixture of an organic metal compound, a metal alkoxide, or an organic acid salt and an organic solvent is formed on a substrate by a spin coating method or a dip coating method; and applying a vibration during the processes until the completion of removing the solvent of the coating film, chemical reaction, and crystalization, that is, a heating and drying process and/or a firing process. COPYRIGHT: (C)2005,JPO&NCIPI
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