| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a thin semiconductor device in which a semiconductor structure, referred to as a CSP, is provided on a base plate, an insulation layer is provided on the base plate around the semiconductor structure, upper layer wiring is provided on the semiconductor structure and the insulation layer, and a solder ball is provided on the connection pad of the upper layer wiring. <P>SOLUTION: Lower surface of the silicon substrate 3 of a semiconductor structure 2 is bonded directly to the upper surface of a base plate 1 composed of a prepreg material. Thickness is reduced by an amount corresponding to the thickness of an adhesive layer as compared with a case where the lower surface of the silicon substrate 3 of the semiconductor structure 2 is bonded to an upper surface of a base plate 1 through an adhesive layer of die bond material. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
