ION IMPLANTATION METHOD AND APPARATUS FOR ION IMPLANTATION

摘要

PROBLEM TO BE SOLVED: To provide an ion implantation method and ion implantation apparatus in which uniformity of physical property of a substrate such as a semiconductor is improved and the physical property value such as distribution of resistivity or the like can be set to the desired physical property value by overcoming ununiformity of the film forming process and the activating annealing process. SOLUTION: In the ion implantation apparatus which is used in the impurity introducing process executed between the film forming process and activating annealing process, ion current density distribution, movement of substrate or beam progressing angle are controlled so that the substrate has the desired impurity density distribution on the basis of the control data to which the data of the film forming process and activating annealing process are added. COPYRIGHT: (C)2005,JPO&NCIPI