| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can form a uniform and homogeneous thin film on the entire surface of a substrate by eliminating the specific point of the central part of the substrate, and to provide a method of manufacturing a semiconductor device. SOLUTION: A susceptor 34 is formed in a treatment chamber 14 for treating a wafer 12. This susceptor 34 rotates in the state of supporting the wafer 12. Furthermore, a shower head 36 for supplying a material gas in a shower-like state is provided in the treatment chamber 14, a gas introducing port 38 for introducing the material gas to this shower head 36 is provided in the treatment chamber 14, and the gas introducing port 38 for introducing the material gas is connected to this shower head 36. The center of the flux of the material gas supplied to the wafer 12 is off-centered from the rotating center of the wafer 12. COPYRIGHT: (C)2005,JPO&NCIPI
|
